Totem pole stage with N-Channel and P-Channel MOSFETs can be used to boost the output from an IC driver. Techniques Available to Boost Current Outputs As all important parameters are specified in an IC driver, designers need not to go through time consuming process of defining, designing and testing circuits to drive MOSFET/IGBTs. IC drivers intrinsically offer lower propagation delay. Figure 1 MOSFET Cell Internal StructureĪlthough there are many ways to drive MOSFET/IGBTs using hard-wired electronic circuits, IC drivers offer convenience and features that attract designers. Therefore, what follows deals only with MOSFET models. It operates as a MOSFET with an injecting region on its Drain side to provide for conductivity modulation of the drain drift region so that on-state losses are reduced, especially when compared to an equally rated high voltage MOSFET.Īs far as driving IGBT is concerned, it resembles a MOSFET and hence all turn-on and turn-off phenomena comments, diagrams and Driver circuits designed for driving MOSFET apply equally well to an IGBT. IGBT derives its advantages from MOSFET and BJT. The limit on this is imposed by two factors: transit time of electrons across the drift region and the time required to charge and discharge the input Gate and Miller capacitances. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques, as well as the IXYS line of MOSFET/IGBT drivers and some practical considerations.ĭue to the absence of minority carrier transport, MOSFETs can be switched at much higher frequencies. This application note presents the MOSFET/IGBT drivers theory and its applications.
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